| PART |
Description |
Maker |
| NM93C06EM8 NM93C06EMT8 NM93C06EN NM93CS06EMT8 NM93 |
256-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Card Edge Connector; No. of Contacts:40; Pitch Spacing:0.1" RoHS Compliant: Yes
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
|
Fairchild Semiconductor, Corp.
EEPROM
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| CA20-600 CD20-600 CA44-703 CB44-703 CA26-700A |
5V range 8-bit MCU with 8 to 32K Flash, 10-bit ADC, 4 timers, SPI, SCI interface
Very low drop voltage regulators with inhibit
SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS
|
ITT, Corp.
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC100EP016AFAR2G MC100EP016AMNG |
3.3 V ECL 8−Bit Synchronous Binary Up Counter 100E SERIES, SYN POSITIVE EDGE TRIGGERED 8-BIT UP BINARY COUNTER, PQFP32
3.3 V ECL 8-Bit Synchronous Binary Up Counter
|
ON Semiconductor
|
| MH32S64APHB-8 MH32S64APHB-7 MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2147483648位（33554432 -文字4位）同步DRAM
2 /147 /483 /648-BIT (33 /554 /432 - WORD BY 64-BIT)Synchronous DRAM
|
Mitsubishi Electric, Corp.
|
| 74HC40103 74HC40103D 74HC40103DB 74HC40103N 74HC40 |
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85 HCT SERIES, SYN POSITIVE EDGE TRIGGERED 8-BIT DOWN BINARY COUNTER, PDSO16
8-bit synchronous binary down counter 8位同步二进制计数器下
|
NXP Semiconductors N.V.
ICST[Integrated Circuit Systems]
PHILIPS[Philips Semiconductors]
|
| MH32S72QJA-7 MH32S72QJA-8 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH8S72DCFD-6 |
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72PHB-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH64S72AWJA-7 |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH8S72BALD-6 |
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
